Positron lifetime and Doppler-broadening measurements in noble metals and their alloys
Identifieur interne : 000575 ( Main/Exploration ); précédent : 000574; suivant : 000576Positron lifetime and Doppler-broadening measurements in noble metals and their alloys
Auteurs : RBID : ISTEX:339_1987_Article_BF00616690.pdfEnglish descriptors
Abstract
Positron annihilation measurements in pure copper and silver as well as in the alloysCuGe,CuIn,CuSb, andAgSb have been performed. Most of the measurements have been carried out in thermal equilibrium. In this way it is possible to deduce vacancy formation — and vacancy — solute atom binding energies. ForCuIn alloys with 3.3 at.% and 7.1 at.% indium precipitation effects have been studied.
DOI: 10.1007/BF00616690
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Most of the measurements have been carried out in thermal equilibrium. In this way it is possible to deduce vacancy formation — and vacancy — solute atom binding energies. ForCuIn alloys with 3.3 at.% and 7.1 at.% indium precipitation effects have been studied.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="9936d1d14ff6499f86f938322bb353c4a684d251"><titleInfo lang="eng"><title>Positron lifetime and Doppler-broadening measurements in noble metals and their alloys</title></titleInfo><name type="personal"><namePart type="given">W.</namePart><namePart type="family">Lühr-Tanck</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Metallphysik, Universität Göttingen and SFB 126 Göttingen-Clausthal, Hospitalstrasse 3-5, D-3400, Göttingen, Fed. Rep. 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A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1987</partNumber><partNumber>Volume: 44</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1987-11-01</dateIssued><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 15</identifier><recordInfo><recordOrigin>Springer-Verlag, 1987</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00616690</identifier><identifier type="matrixNumber">Art1</identifier><identifier type="local">BF00616690</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>209</start><end>211</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1987</recordOrigin><recordIdentifier>339_1987_Article_BF00616690.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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